Semi-numerical Modelling of an n-channel Irradiated MOSFET
By: S.Dasgupta and P.Chakrabarti
Published in: International Journal of Electronics Vol: 88 (Pg 301-313) Date: 2001
Influence of Ionising Radiation on CMOS Inverters
By: S.Dasgupta, R.K. Chauhan and P. Chakrabarti
Published in: Microelectronics Journal (Elsevier) Vol: 32 (Pg 615-620) Date: 2001
Ionising Radiation effects in an Ion-Implanted MOSFET: A Two-Dimensional Analytical Study
By: S.Dasgupta, R.K. chauhan, G. Singh and P. Chakrabarti
Published in: International Journal of Electronics Vol: 89 (Pg 277-288) Date: 2002
A pseudo-two-dimensional model of an n-channel MOSFET under the influence of Ionising Radiation
By: S.Dasgupta, R.K. Chauhan and P. Chakrabarti
Published in: Semiconductor Science and Technology (IOP) Vol: 17 (Pg 961-968) Date: 2002
Two-Dimensional Numerical Modeling of a deep sub-micron Irradiated MOSFET to extract its Global Char
By: S.Dasgupta
Published in: Semiconductor Sceince and Technology (IOP) Vol: 18 (Pg 124-132) Date: 2003
Self-consistent Solution of Two-dimensional Poisson Equation and Schrodinger Wave Equation for Nano-
By: Deepesh Jain and S.Dasgupta
Published in: Journal of Nanoscience and Nanotechnology (APS) Date: 2004
Two-dimensional numerical modeling of lightly doped nano-scale double-gate MOSFET
By: Deepanjan Datta, A.A.P.Sarab and S.Dasgupta
Published in: Journal of Computational and Theoretical Nanoscience Vol: 3 (Pg 414-422) Date: 2005
Study of the Leakage Current in Novel Nanoscale Device Architecture depending on Doping Profile
By: D.Datta and S.Dasgupta
Published in: Journal of Computational and Theoretical Nanoscience Vol: In press Date: 2006
Self-Consistent Solutions of 2D-Poisson and Schrodinger Wave Equations for a Gaussian Doped 50 nm MO
By: A. Agrawal and S.Dasgupta
Published in: Journal of Computational and Theoretical Nanoscience Vol: 3 (Pg 101-109) Date: 2006
Design and Development of Ultra Low Power MOS based VLSI Architecture
By: Deepanjan Datta and S.Dasgupta
Published in: Journal of Computational and Teoretical Nanoscience (APSBS) Vol: 3 (Pg 01-11) Date: 2006
Two-Dimensional Analytical Modeling of Gaussian Doped Nano-scale Double-gate MOSFET
By: D.Datta, A.A.P.Sarab and S.Dasgupta
Published in: Microelectronics Journal (Elsevier) Vol: 37 (Pg 537-545) Date: 2006 (online)
Nanoscale Device Architecture to Reduce Leakage Current through QM Modelling Schemes in current VLSI Technology Node
By: A.A.P.Sarab, Deepanjan Datta and S.Dasgupta
Published in: Virtual Journal of Nanoscale Science and Technology Vol: 00 (Pg 1384-1397) Date: 2006
Novel Design Technique to reduce off state power dissipation in MOS based devices: A QM Study
By: Deepanjan Datta, Samiran Gangulay, A.A.P.Sarab and S.Dasgupta
Published in: Journal of Vacuum Science and Technology-B Vol: 24 (Pg 1384-1397) Date: 2006
Novel Nanoscale Device architecture to reduce Leakage Currents in Logic Circuits: A Quantum-Mechanic
By: D.Datta, S. Ganguly, A.A.P.Sarab and S.Dasgupta
Published in: Semiconductor Science and Technology (IOP) Vol: 21 (Pg 397-408) Date: 2006
Modeling and Simulation of the Nanoscale Triple-Gate
By: Deepanjan Dutta, A.A.P.Sarab and S.Dasgupta
Published in: Journal of Nanoscience and Optoelectronics Vol: 01 (Pg 1-14) Date: 2006
Low Band-to-Band Tunnelling and Gate Tunnelling Current in Novel Nanoscale Double-Gate Architecture: Simulations and Investigation
By: Deepanjan Dutta, samiran Ganguly and S.Dasgupta
Published in: Nanotechnology (IOP) Vol: 18 (Pg -) Date: 2007
Analytic Modeling of Non-Uniform Graded Dopant Profile of Polysilicon Gate in Gate Tunelling Current for N-MOSFET in Nanoscale Regime
By: Ashwani Kumar and S.Dasgupta
Published in: Journal of Computational and Theoretical Nanoscience Vol: 4 (Pg 179-185) Date: 2007
Unified Compact Modelling of a Gate Tunneling current considering Image Forge Barrier Lowering for nanoscale N-MOSFET
By: Ashwani Kumar and S.Dasgupta
Published in: Journal of Computational and Theoretical Nanoscience Vol: 4 (Pg 482-487) Date: 2007
Analysis and Evaluation of Output characteristics of Gaussian doped Nanoscale MOSFET using Green's
By: Ritambhar Roy and S.Dasgupta
Published in: Journal of Computational and Theoretical Nanoscience Vol: 3 (Pg 811-817) Date: 2006
Quantum Mechanical Treatment for the reduction of various leakage components in novel nanocscale MOS
By: Deepanjan Datta, A.A.P.Sarab and s.Dasgupta
Published in: Journal of Nanoscience and Optoelectronics Vol: 01 (Pg 237-250) Date: 2006
Evaluation of Threshold Voltage for 30 nm Symmetric Double Gate (SDG) MOSFET and it’s Variation with Process Parameters
By: S. K. Vishvakarma, B. Raj, A. K. Saxena, Rahul Singh, Chinmaya R. Panda and S. Dasgupta
Published in: Journal of Computational and Theoretical Nanosciences , American Scientific Publishers (ASP) Vol: in press (Pg Accepted) Date: 0/0/0000
Two Dimensional Analytical Potential Modeling of Nanoscale Symmetric Double Gate (SDG) MOSFET with Ultra Thin Body (UTB)
By: S. K. Vishvakarma, Vinit Agrawal, B. Raj, S. Dasgupta, A. K. Saxena
Published in: Journal of Computational and Theoretical Nanoscience Vol: 4 (Pg 1144-1148) Date: Sept. 2007
Modeling of Inversion Charge Density in Nanoscale Symmetric Double Gate (SDG) MOSFET: An analytical Approach
By: S. K. Vishvakarma, B. Raj, A. K. Saxena and S. Dasgupta
Published in: Journal of Nanoelectronics and Optoelectronics, American Scientific Publishers (ASP) Vol: 2 (Pg in press) Date: 2007